semiconductor group 1 silicon crossover ring quad schottky diode bat 15-099r l low barrier diode for double balanced mixers, phase detectors and modulators
semiconductor group 2 bat 15-099r electrical characteristics per diode at t a = 25 ?c, unless otherwise specified. forward voltage matching 1) i f = 10 ma d v f mv CC20 forward voltage i f = 1 ma i f = 10 ma v f v C C 0.23 0.32 C C diode capacitance v r = 0, f = 1 mhz c t pf C 0.38 C parameter symbol min. typ. unit values max. forward resistance i f = 10 ma / 50 ma r f w C 5.5 C forward current i f = f ( v f ) forward current i f = f ( t s ; t a *) *package mounted on alumina 1) d v f is the difference between the lowest and the highest v f in the component.
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